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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5150 DESCRIPTION *High Breakdown Voltage: VCBO= 1700V (Min) *High Switching Speed *Low Saturation Voltage APPLICATIONS *Horizontal deflection output for high resolution display, color TV *High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 1700 V 700 V 5 V 10 A 20 A 5 A 50 W .cn mi e ICP Collector Current-Pulse IB B Base Current- Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5150 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 1.2 V ICBO Collector Cutoff Current VCB= 1700V ; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance Switching times w w w. sem isc IC= 1A ; VCE= 5V IC= 6A ; VCE= 5V IC= 0.1A ; VCE= 10V .cn i 10 4 2 185 10 A 28 8.5 MHz IE= 0 ; VCB= 10V; ftest= 1.0MHz pF tstg Storage Time ICP= 5A; IB1(end)= 1.0A; fH= 64kHz 4.0 s tf Fall Time 0.3 s isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5150 w w scs .i w .cn mi e isc Websitewww.iscsemi.cn |
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